elektronische bauelemente 2N7002KT n-channel enhancement mosfet 29-apr-2013 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. s ot - 523 rs rohs compliant product a suffix of -c specifies halogen & lead-free features low gate charge for fast switching. esd protected gate. applications power management load switch esd protected:1500v easily designed drive circuits marking package information package mpq leader size sot-523 3k 7 inch maximum ratings (t a =25 unless otherwise specified) parameter symbol rating unit drain-source voltage v dss 60 v gate-source voltage(continuous) v gss 20 v continuous i d 115 drain current pulsed i dp 1 800 ma continuous i dr 115 reverse drain current pulsed i drp 1 800 ma total power dissipation p d 2 225 mw channel temperature t j 150 c operating storage temperature range t stg -55~150 c note 1. pw Q 10 s, duty cycle Q 1 % 2. when mounted on a 1*0.75*0.062 inch glass epoxy boa rd millimeter millimeter ref. min. max. ref. min. max. a 1.50 1.7 0 k 0. 30 0.50 b 0.75 0.95 m --- 10 o c 0.60 0.80 n --- 10 o d 0.23 0.33 s 1.50 1.70 g 0.50bsc j 0.10 0.20
elektronische bauelemente 2N7002KT n-channel enhancement mosfet 29-apr-2013 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions off characteristics 2 drain-source breakdown voltage v (br)dss 60 - - v v gs =0, i d = 10 a zero gate voltage drain current i dss - - 1 a v ds =60v, v gs =0 gate-source leakage i gss - - 10 a v gs = 20v, v ds =0 on characteristics 2 gate threshold voltage v gs(th) 1 1.5 2 v v ds =v gs , id=250 a - - 7.5 v gs =10v, i d =0.5a static drain-source on resistance r ds(on) - - 7.5 v gs =5v, i d =0.05a forward transfer admittance 1 gfs 80 - - ms v ds =10v, i d =0.2a dynamic characteristics input capacitance c iss - 25 50 output capacitance c oss - 10 25 reverse transfer capacitance c rss - 3 5 pf v ds =25v, v gs =0, f=1mhz switching characteristics turn-on delay time 1 t d(on) - 12 20 turn-off delay time 1 t d(off) - 20 30 ns v dd =30v, v gs =10v, i d =0.2a, r g =10 , r l =150 note: 1. pulse test pulse width Q 300 s, duty cycle Q 2 2. when mounted on a 1*0.75*0.062 inch glass epoxy boa rd
elektronische bauelemente 2N7002KT n-channel enhancement mosfet 29-apr-2013 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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